Please use this identifier to cite or link to this item:
http://localhost:8080/xmlui/handle/123456789/462| Title: | Analytical modeling and simulation of gate material and channel engineering of DG Strained-Si MOSFET with interface charges |
| Authors: | Rao, Suddapalli Subba |
| Keywords: | modeling simulation MOSFET |
| Issue Date: | 2021 |
| URI: | http://localhost:8080/xmlui/handle/123456789/462 |
| Appears in Collections: | Electronics and Communication Engineering |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Thesis_717028.pdf | 8.78 MB | Adobe PDF | View/Open |
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