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  3. Electronics and Communication Engineering
Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/462
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dc.contributor.authorRao, Suddapalli Subba-
dc.date.accessioned2023-10-09T06:28:35Z-
dc.date.available2023-10-09T06:28:35Z-
dc.date.issued2021-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/462-
dc.language.isoenen_US
dc.subjectmodelingen_US
dc.subjectsimulationen_US
dc.subjectMOSFETen_US
dc.titleAnalytical modeling and simulation of gate material and channel engineering of DG Strained-Si MOSFET with interface chargesen_US
dc.typeThesisen_US
Appears in Collections:Electronics and Communication Engineering

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