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dc.contributor.authorPatri, Sreehari R-
dc.contributor.authorKrishnaprasad, K.S.R-
dc.contributor.authorAlapati, Suresh-
dc.contributor.authorRao, Rajeshwar-
dc.date.accessioned2025-01-18T06:44:18Z-
dc.date.available2025-01-18T06:44:18Z-
dc.date.issued2013-
dc.identifier.citation10.1117/12.2012306en_US
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/2783-
dc.descriptionNITWen_US
dc.description.abstractLow-dropout (LDO) regulator with modest ripple and improved transient response is implemented in 0.18μm CMOS technology. The proposed regulator for SOC application can achieve high stability for load current from zero to 100mA. This LDO uses process, temperature independent biasing for error amplifier which makes LDO temperature and process independent. The experimental results show the load regulation of 162 μV/mA and line regulation of 0.9 mV/V. The whole LDO chip consumes a quiescent current of 50 μA with an ultra low dropout voltage of 200mV at the maximum output current of 100mAen_US
dc.language.isoenen_US
dc.publisherProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.subjectLine regulation,en_US
dc.subjectLoad regulation,en_US
dc.titleLow-dropout regulator with modest ripple and rugged performance in 180nmen_US
dc.typeOtheren_US
Appears in Collections:Electronics and Communication Engineering

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