Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/2536
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dc.contributor.authorNarang, R.-
dc.contributor.authorReddy, K.V.S.;-
dc.contributor.authorSaxena, M.-
dc.contributor.authorGupta, R.S.-
dc.contributor.authorGupta, M.-
dc.date.accessioned2025-01-07T09:47:19Z-
dc.date.available2025-01-07T09:47:19Z-
dc.date.issued2012-10-
dc.identifier.citation10.1109/TED.2012.2208115en_US
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/2536-
dc.descriptionNITWen_US
dc.description.abstractIn this paper, an analytical model for a p-n-p-n tunnel field-effect transistor (TFET) working as a biosensor for label-free biomolecule detection purposes is developed and verified with device simulation results. The model provides a generalized solution for the device electrostatics and electrical characteristics of the p-n-p-n-TFET-based sensor and also incorporates the two important properties possessed by a biomolecule, i.e., its dielectric constant and charge. Furthermore, the sensitivity of the TFET-based biosensor has been compared with that of a conventional FET-based counterpart in terms of threshold voltage ( V th ) shift, variation in the on-current ( I on ) level, and I on / I off ratio. It has been shown that the TFET-based sensor shows a large deviation in the current level, and thus, change in I on can also be considered as a suitable sensing parameter. Moreover, the impacts of device parameters (channel thickness and cavity length), process variability, and process-induced damage on the sensitivity of the biosensor have also been discussed.en_US
dc.language.isoenen_US
dc.publisherIEEE Transactions on Electron Devicesen_US
dc.subjectBiosensoren_US
dc.subjectDielectric-modulated field-effect transistor (FET) (DM-FET)en_US
dc.titleA Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysisen_US
dc.typeArticleen_US
Appears in Collections:Electrical Engineering



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