Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/2525
Title: Design of Multilayer On-chip Inductor with Low K-Dielectrics for RF applications
Authors: Nagesh.Deevi, B.V.N.S.M
Rao, N.Bheema
Keywords: Di-electric constant
Self resonant frequency (SRF)
Issue Date: 2015
Publisher: 2015 3rd International Conference on Signal Processing, Communication and Networking, ICSCN 2015
Citation: 10.1109/ICSCN.2015.7219894
Abstract: In this paper the effect of low k dielectrics on Quality factor is studied using multi level interconnect technology. With low-K dielectric we achieved improvement in the Quality factor of spiral inductor at higher frequency. From the simulation results the proposed inductor using low k dielectric achieved high Q with 100% improvement when compared with basic CMOS process on chip inductor. The percentage of increase in quality will improve as we increase the outer diameter of the spiral inductor. It is also observed the effect of conductor width and outer diameter on the proposed inductor following standard rules defined. The proposed inductor structure occupies maximum area of 20µm×20µm which is suitable for higher order RF frequency applications
Description: NITW
URI: http://localhost:8080/xmlui/handle/123456789/2525
Appears in Collections:Electronics and Communication Engineering

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