Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/2471
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dc.contributor.authorWillinger, A.-
dc.contributor.authorRoy, S.-
dc.contributor.authorSantagiustina, M.-
dc.contributor.authorCombrié, S.-
dc.contributor.authorRossi, A. De-
dc.contributor.authorEisenstein, G.-
dc.date.accessioned2025-01-06T10:22:55Z-
dc.date.available2025-01-06T10:22:55Z-
dc.date.issued2015-
dc.identifier.citation10.1364/OE.23.017751en_US
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/2471-
dc.descriptionNITWen_US
dc.description.abstractWe report the first demonstration of narrowband parametric amplification in a chip scale semiconductor waveguide. A dispersion engineered, Ga0.5In0.5P photonic crystal waveguide with a dispersion function that exhibits two zero crossings was used with a pulsed pump placed in the normal dispersion regime while a tunable probe was scanned on either side of the pump. A peak conversion efficiency of −10dB was obtained with a peak pump power of only 650mW. The narrowband nature of the gain spectrum was clearly demonstrated.en_US
dc.language.isoenen_US
dc.publisherOptics Expressen_US
dc.titleNarrowband optical parametric amplification measurements in Ga0.5In0.5P photonic crystal waveguidesen_US
dc.typeArticleen_US
Appears in Collections:Physics

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