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DC Field | Value | Language |
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dc.contributor.author | Bashir, Mudasir | - |
dc.contributor.author | Patri, Sreehari Rao | - |
dc.contributor.author | KSR, Krishnaprasad | - |
dc.date.accessioned | 2025-01-03T09:05:21Z | - |
dc.date.available | 2025-01-03T09:05:21Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | 10.1109/ISVDAT.2015.7208056 | en_US |
dc.identifier.uri | http://localhost:8080/xmlui/handle/123456789/2398 | - |
dc.description | NITW | en_US |
dc.description.abstract | This paper proposes a new sensor circuit to monitor on-chip frequency temperature changes in VLSI circuits. The proposed circuit exploits the temperature dependency of current/voltage of metal-oxide-semiconductor field effect transistor. The variation of current/voltage in the temperature sensor circuit with respect to temperature is subjected to a ring oscillator which provides the relative frequency translation. The circuit is implemented in 0.18µm CMOS technology for a temperature range of -20o C to +150 oC, operates with two point calibration, having an uncertainty of -1.1o C to +1.4o C, consumes a low energy of 0.31nJ per sample and a power consumption of 0.093µW at 12MHz frequency. A switch is used at reference clock frequency to perform self-calibration, hence removing the effects of mismatch and process variation. | en_US |
dc.language.iso | en | en_US |
dc.publisher | 19th International Symposium on VLSI Design and Test, VDAT 2015 - Proceedings | en_US |
dc.subject | Negative Bias Thermal Instability | en_US |
dc.subject | Current starved ring oscillator | en_US |
dc.title | On-chip CMOS temperature sensor with current calibrated accuracy of -1.1°C to +1.4°C (3?) from -20°C to 150°C | en_US |
dc.type | Other | en_US |
Appears in Collections: | Electronics and Communication Engineering |
Files in This Item:
File | Description | Size | Format | |
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On-chip_CMOS_temperature_sensor_with_current_calibrated_accuracy_of_1.1C_to_1.4C_3_from_20C_to_150C.pdf | 994.59 kB | Adobe PDF | View/Open |
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