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dc.contributor.authorBashir, Mudasir-
dc.contributor.authorPatri, Sreehari Rao-
dc.contributor.authorKSR, Krishnaprasad-
dc.date.accessioned2025-01-03T09:05:21Z-
dc.date.available2025-01-03T09:05:21Z-
dc.date.issued2015-
dc.identifier.citation10.1109/ISVDAT.2015.7208056en_US
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/2398-
dc.descriptionNITWen_US
dc.description.abstractThis paper proposes a new sensor circuit to monitor on-chip frequency temperature changes in VLSI circuits. The proposed circuit exploits the temperature dependency of current/voltage of metal-oxide-semiconductor field effect transistor. The variation of current/voltage in the temperature sensor circuit with respect to temperature is subjected to a ring oscillator which provides the relative frequency translation. The circuit is implemented in 0.18µm CMOS technology for a temperature range of -20o C to +150 oC, operates with two point calibration, having an uncertainty of -1.1o C to +1.4o C, consumes a low energy of 0.31nJ per sample and a power consumption of 0.093µW at 12MHz frequency. A switch is used at reference clock frequency to perform self-calibration, hence removing the effects of mismatch and process variation.en_US
dc.language.isoenen_US
dc.publisher19th International Symposium on VLSI Design and Test, VDAT 2015 - Proceedingsen_US
dc.subjectNegative Bias Thermal Instabilityen_US
dc.subjectCurrent starved ring oscillatoren_US
dc.titleOn-chip CMOS temperature sensor with current calibrated accuracy of -1.1°C to +1.4°C (3?) from -20°C to 150°Cen_US
dc.typeOtheren_US
Appears in Collections:Electronics and Communication Engineering



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