Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/2398
Title: On-chip CMOS temperature sensor with current calibrated accuracy of -1.1°C to +1.4°C (3?) from -20°C to 150°C
Authors: Bashir, Mudasir
Patri, Sreehari Rao
KSR, Krishnaprasad
Keywords: Negative Bias Thermal Instability
Current starved ring oscillator
Issue Date: 2015
Publisher: 19th International Symposium on VLSI Design and Test, VDAT 2015 - Proceedings
Citation: 10.1109/ISVDAT.2015.7208056
Abstract: This paper proposes a new sensor circuit to monitor on-chip frequency temperature changes in VLSI circuits. The proposed circuit exploits the temperature dependency of current/voltage of metal-oxide-semiconductor field effect transistor. The variation of current/voltage in the temperature sensor circuit with respect to temperature is subjected to a ring oscillator which provides the relative frequency translation. The circuit is implemented in 0.18µm CMOS technology for a temperature range of -20o C to +150 oC, operates with two point calibration, having an uncertainty of -1.1o C to +1.4o C, consumes a low energy of 0.31nJ per sample and a power consumption of 0.093µW at 12MHz frequency. A switch is used at reference clock frequency to perform self-calibration, hence removing the effects of mismatch and process variation.
Description: NITW
URI: http://localhost:8080/xmlui/handle/123456789/2398
Appears in Collections:Electronics and Communication Engineering



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