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dc.contributor.authorKumar, P. Akhendra-
dc.contributor.authorRao, N.Bheema-
dc.date.accessioned2025-01-02T06:48:53Z-
dc.date.available2025-01-02T06:48:53Z-
dc.date.issued2015-
dc.identifier.citation10.1109/IIC.2015.7150862en_US
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/2338-
dc.descriptionNITWen_US
dc.description.abstractIn this paper, a novel fractal inductor was presented. This inductor provides a high quality factor of 19.8 at a frequency of 9.1GHz with SRF of 47.1 GHz. The simulations are carried out using Full wave High Frequency Structural Simulator (HFSS) for a single layered O.18,..m technology. The simulation results show an improvement in quality factor by 22% over conventional fractal inductor and results also shows an improvement in SRF by 21 % over conventional fractal inductor.en_US
dc.language.isoenen_US
dc.publisher2015 International Conference on Industrial Instrumentation and Control, ICIC 2015en_US
dc.subjectQuality factor (Q)en_US
dc.subjectSelf Resonant Frequency (SRF)en_US
dc.titleA Novel Fractal Inductor for RF Applicationsen_US
dc.typeOtheren_US
Appears in Collections:Electronics and Communication Engineering

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