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http://localhost:8080/xmlui/handle/123456789/2331Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Babu, K. Sowri | - |
| dc.contributor.author | Reddy, A. Ramachandra | - |
| dc.contributor.author | Reddy, K. Venugopal | - |
| dc.contributor.author | Mallika, A.N. | - |
| dc.date.accessioned | 2025-01-02T06:14:50Z | - |
| dc.date.available | 2025-01-02T06:14:50Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.citation | 10.1016/j.mssp.2014.07.055 | en_US |
| dc.identifier.uri | http://localhost:8080/xmlui/handle/123456789/2331 | - |
| dc.description | NITW | en_US |
| dc.description.abstract | The effect of annealing temperature on photoluminescence (PL) of ZnO–SiO2 nanocomposite was investigated. The ZnO–SiO2 nanocomposite was annealed at different temperatures from 600 °C to 1000 °C with a step of 100 °C. High Resolution Transmission Electron Microscope (HR-TEM) pictures showed ZnO nanoparticles of 5 nm are capped with amorphous SiO2 matrix. Field Emission Scanning Electron Microscope (FE-SEM) pictures showed that samples exhibit spherical morphology up to 800 °C and dumbbell morphology above 800 °C. The absorption spectrum of ZnO–SiO2 nanocomposite suffers a blue-shift from 369 nm to 365 nm with increase of temperature from 800 °C to 1000 °C. The PL spectrum of ZnO–SiO2 nanocomposite exhibited an UV emission positioned at 396 nm. The UV emission intensity increased as the temperature increased from 600 °C to 700 °C and then decreased for samples annealed at and above 800°C. The XRD results showed that formation of willemite phase starts at 800 °C and pure willemite phase formed at 1000 °C. The decrease of the intensity of 396 nm emission peak at 900 °C and 1000 °C is due to the collapse of the ZnO hexagonal structure. This is due to the dominant diffusion of Zn into SiO2 at these temperatures. At 1000 °C, an emission peak at 388 nm is observed in addition to UV emission of ZnO at 396 nm and is believed to be originated from the willemite. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Materials Science in Semiconductor Processing | en_US |
| dc.subject | ZnO nanoparticles | en_US |
| dc.subject | Photoluminescence | en_US |
| dc.title | High thermal annealing effect on structural and optical properties of ZnO–SiO2 nanocomposite | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Physics | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| High thermal annealing effect on structural and optical properties of ZnO–SiO2 nanocomposite.pdf | 2.03 MB | Adobe PDF | View/Open |
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