Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/2331
Title: High thermal annealing effect on structural and optical properties of ZnO–SiO2 nanocomposite
Authors: Babu, K. Sowri
Reddy, A. Ramachandra
Reddy, K. Venugopal
Mallika, A.N.
Keywords: ZnO nanoparticles
Photoluminescence
Issue Date: 2014
Publisher: Materials Science in Semiconductor Processing
Citation: 10.1016/j.mssp.2014.07.055
Abstract: The effect of annealing temperature on photoluminescence (PL) of ZnO–SiO2 nanocomposite was investigated. The ZnO–SiO2 nanocomposite was annealed at different temperatures from 600 °C to 1000 °C with a step of 100 °C. High Resolution Transmission Electron Microscope (HR-TEM) pictures showed ZnO nanoparticles of 5 nm are capped with amorphous SiO2 matrix. Field Emission Scanning Electron Microscope (FE-SEM) pictures showed that samples exhibit spherical morphology up to 800 °C and dumbbell morphology above 800 °C. The absorption spectrum of ZnO–SiO2 nanocomposite suffers a blue-shift from 369 nm to 365 nm with increase of temperature from 800 °C to 1000 °C. The PL spectrum of ZnO–SiO2 nanocomposite exhibited an UV emission positioned at 396 nm. The UV emission intensity increased as the temperature increased from 600 °C to 700 °C and then decreased for samples annealed at and above 800°C. The XRD results showed that formation of willemite phase starts at 800 °C and pure willemite phase formed at 1000 °C. The decrease of the intensity of 396 nm emission peak at 900 °C and 1000 °C is due to the collapse of the ZnO hexagonal structure. This is due to the dominant diffusion of Zn into SiO2 at these temperatures. At 1000 °C, an emission peak at 388 nm is observed in addition to UV emission of ZnO at 396 nm and is believed to be originated from the willemite.
Description: NITW
URI: http://localhost:8080/xmlui/handle/123456789/2331
Appears in Collections:Physics



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